, li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 silicon controlled rectifier reverse blocking triode thyristor .,. designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. ? economical for a wide range of uses ? high surge current ? ijsm = 35 amps ? low forward "on" voltage ? 1.2 v (typ) @ ijm = 35 amps ? practical level triggering and holding characteristics ? 10 rna {typ) @ tc = 25c ? rugged construction in either pressfit or stud package ? glass passivated junctions for maximum reliability maximum ratings MCR3835 series mcr3935 series scrs 35 amperes rms 50 thru 800 volts rating peak repetitive forward and reverse blocking voltage note 1 MCR3835-2 -8 -10 mcr393b-2 -3 -4 -6 -8 -10 peak non-repetitive reverse blocking voltage (t s; 5 ms) MCR3835-2 -8 -10 mcr3935-2 -3 -4 ?6 -8 -10 forward current rms peak surge current (one cycle, 60 hz, tj = -40 to + 125c) circuit fusing (tj = -40 to -t- 100c, t = 1 to 8.3 ms) peak gate power average gate power peak forward gate current peak gate voltage ? forward reverse operating junction temperature range symbol vdrm vrrm vrsm 'tirms) itsm ft pgfm pqf(av) igfm vgfm vgrm tj value 50 600 800 50 100 200 400 600 800 35 700 900 76 150 300 goo 700 900 35 350 610 5 | 0.6 2 10 10 -40 to +125 unit volts volts amps amps a2s watts watt amps volt ?c uu-2u3) style 1 MCR3835 series case 175-03 style 1 mcr3935 series note 1. vqrm and vrrm for all types can be applied on a continuous dc basis without incurring damage. ratings apply for zero or negative gate voltage. devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. ounlifv
MCR3835 series ? mcr3935 series maximum ratings rating storage temperature range stud torque symbol tstg - value -40 to +150 30 unit ?c in. ib. thermal characteristics characteristic thermal resistance, junction to case MCR3835 mcr3936 symbol r&jc max 1.2 1.3 unit ?c/w electrical characteristics (tc = 26c unless otherwise noted.) characteristic peak forward or reverse blocking current (rated vdrm or vrrm, flate open) tj = 26"c tj = 100c forward "on" voltage (itm - 35 a peak) gate trigger current (continuous dc) (vd - 7 v, hl - 100 ni gate trigger voltage (continuous dc) (vd = 7 v, rl = 100 n) (vo = rated vdrm, rl = 10 ft' tj " 100cl holding current (vd = 7 v, gate open) turn-on time (tj + tr) (itm = 35 adc, iqt = 40 madc) turn-off time . mcr31 of 30" rating v &^ ^ \ r ^\^ an 0 i 1cr3b3s k xj xlx 135 must be derated on addition ., in figure 1, the max tc of 35at24adcr!s70c,:deratin , below tj max. mcr3935de- njuld be 33 c. inj tc mix e} c. ' ohdu v x i *?%?? ?-a-? ;tion \ dc ,ngle 4.u 8.0 12 16 20 24 28 32 itiav}, average forward current (amp] a & ^ vx r 0 91 '// s/ / / 180 ((/^. / y^ ' / { d f w. "?" "^^ ? o- conduction angle 4.0 8.0 12 ib 20 24 28 32 36 40 it(av). average forward current (amp)
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